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dc.contributor.authorYeh, CFen_US
dc.contributor.authorChen, TJen_US
dc.contributor.authorLiu, Cen_US
dc.contributor.authorGudmundsson, JTen_US
dc.contributor.authorLieberman, MAen_US
dc.date.accessioned2014-12-08T15:46:38Z-
dc.date.available2014-12-08T15:46:38Z-
dc.date.issued1999-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.761021en_US
dc.identifier.urihttp://hdl.handle.net/11536/31366-
dc.description.abstractA planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.en_US
dc.language.isoen_USen_US
dc.subjecthydrogenationen_US
dc.subjectinductively coupled plasmaen_US
dc.subjectthin-film transistoren_US
dc.titleHydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar dischargeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.761021en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue5en_US
dc.citation.spage223en_US
dc.citation.epage225en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000080066700010-
dc.citation.woscount21-
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