Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

Abstract

By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350degreesC to achieve excellent gate oxide integrity of low leakage current < 5x10(-8) A/cm(2) (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5x10(11)/eV cm(2). The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 &mu;A/&mu;m at V-D=1 V and V-G = 5 V and the high electron field effect mobility of 231 cm(2)/V.S.