Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge

標題:	Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge
作者:	Yeh, CF Chen, TJ Liu, C Gudmundsson, JT Lieberman, MA 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	hydrogenation;inductively coupled plasma;thin-film transistor
公開日期:	1-五月-1999
摘要:	A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.
URI:	http://dx.doi.org/10.1109/55.761021 http://hdl.handle.net/11536/31366
ISSN:	0741-3106
DOI:	10.1109/55.761021
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	20
Issue:	5
起始頁:	223
結束頁:	225
顯示於類別：	期刊論文

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