標題: Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
作者: Tseng, CH
Chang, TK
Chu, FT
Shieh, JM
Dai, BT
Cheng, HC
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: breakdown field;gate oxide;inductively coupled plasma (ICP);leakage current;thin-film transistor (TFT)
公開日期: 1-Jun-2002
摘要: By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350degreesC to achieve excellent gate oxide integrity of low leakage current < 5x10(-8) A/cm(2) (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5x10(11)/eV cm(2). The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 &mu;A/&mu;m at V-D=1 V and V-G = 5 V and the high electron field effect mobility of 231 cm(2)/V.S.
URI: http://dx.doi.org/10.1109/LED.2002.1004226
http://hdl.handle.net/11536/28758
ISSN: 0741-3106
DOI: 10.1109/LED.2002.1004226
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 23
Issue: 6
起始頁: 333
結束頁: 335
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