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dc.contributor.authorJOU, SJen_US
dc.contributor.authorCHIOU, SHen_US
dc.contributor.authorTAO, YSen_US
dc.contributor.authorSHEN, WZen_US
dc.date.accessioned2014-12-08T15:04:39Z-
dc.date.available2014-12-08T15:04:39Z-
dc.date.issued1993-02-01en_US
dc.identifier.issn0956-3768en_US
dc.identifier.urihttp://hdl.handle.net/11536/3136-
dc.description.abstractAn efficient simulator of multiple sets of multiple faults, with electrical timing information for an MOS IC. is presented. The physical faults in a real circuit are modelled more realistically by the node-short, line-open and threshold voltage degradation faults at the transistor level. On using event-driven, selective trace and mixed incremental-in-space. signal and time simulation techniques. the simulation results show that it is superior to other approaches in speed, extra memory used, and precision. Moreover, this simulator is suitable for parallel simulation in a multiprocessor system.en_US
dc.language.isoen_USen_US
dc.subjectFAULT SIMULATIONen_US
dc.subjectMOS DEVICESen_US
dc.titleEVENT-DRIVEN INCREMENTAL TIMING FAULT SIMULATORen_US
dc.typeArticleen_US
dc.identifier.journalIEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMSen_US
dc.citation.volume140en_US
dc.citation.issue1en_US
dc.citation.spage45en_US
dc.citation.epage54en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LF60600007-
dc.citation.woscount0-
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