Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

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DC Field	Value	Language
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chen, JH	en_US
dc.contributor.author	Wang, MF	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:46:40Z	-
dc.date.available	2014-12-08T15:46:40Z	-
dc.date.issued	1999-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.761025	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31378	-
dc.description.abstract	This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q(bd) (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.761025	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	5	en_US
dc.citation.spage	235	en_US
dc.citation.epage	237	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000080066700014	-
dc.citation.woscount	2	-
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