標題: Ba(Ti0.8Sn0.2)O-3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications
作者: Kuo, YF
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1999
摘要: Polycrystalline thin films of Ba(Ti0.8Sn0.2)O-3 100 nm thick were deposited on Pt/TiO2/SiO2/Si(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650 degrees C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)/(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films. (C) 1999 The Electrochemical Society. S1099-0062(98)11-098-2. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1390795
http://hdl.handle.net/11536/31379
ISSN: 1099-0062
DOI: 10.1149/1.1390795
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 2
Issue: 5
起始頁: 236
結束頁: 237
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