Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates

doi:10.1016/S0026-2692(98)00137-2

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, FY	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Shen, JX	en_US
dc.contributor.author	Oka, Y	en_US
dc.contributor.author	Cheng, HH	en_US
dc.date.accessioned	2014-12-08T15:46:43Z	-
dc.date.available	2014-12-08T15:46:43Z	-
dc.date.issued	1999-04-01	en_US
dc.identifier.issn	0026-2692	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0026-2692(98)00137-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31417	-
dc.description.abstract	The exciton dynamics in In0.15Ga0.85As/GaAs quantum wells grown on (111)B and (100)GaAs substrates are studied by the time-resolved photoluminescence (PL). We have found that the piezoelectric fields in (111)B samples affect the transient behavior of PL spectra. Compared with the reference (100) samples, we have confirmed that the piezoelectric effect induces slower exciton relaxation in (111)B strained quantum wells. (C) 1999 Elsevier Science Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0026-2692(98)00137-2	en_US
dc.identifier.journal	MICROELECTRONICS JOURNAL	en_US
dc.citation.volume	30	en_US
dc.citation.issue	4-5	en_US
dc.citation.spage	367	en_US
dc.citation.epage	371	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000079841600012	-
dc.citation.woscount	1	-
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