標題: | Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate |
作者: | Chang, TY Lei, TF Chao, TS Huang, CT Chen, SK Tuan, A Chou, S 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | ultra-thin oxide;NF3;co-sacilide;Si-F and Si-N bonds;breakdown field;leakage current;tunneling mechanism |
公開日期: | 1-四月-1999 |
摘要: | To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing fate, source and drain parasitic resistance with gate lengths down to 0.2 mu m is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 mu m. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing. |
URI: | http://dx.doi.org/10.1143/JJAP.38.2243 http://hdl.handle.net/11536/31433 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.38.2243 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 38 |
Issue: | 4B |
起始頁: | 2243 |
結束頁: | 2246 |
顯示於類別: | 會議論文 |