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dc.contributor.authorTzeng, CTen_US
dc.contributor.authorYuh, JYen_US
dc.contributor.authorLo, WSen_US
dc.contributor.authorChu, RYen_US
dc.contributor.authorTsuei, KDen_US
dc.date.accessioned2014-12-08T15:46:46Z-
dc.date.available2014-12-08T15:46:46Z-
dc.date.issued1999-03-10en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0039-6028(98)00910-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/31454-
dc.description.abstractWe have carried out an extensive study on the surface state properties of an ionic, insulating Be2C(100) surface using angle-resolved photoemission spectroscopy. Two surface states were observed and characterized. One (S1) is derived at the Gamma-point above the valence band maximum in the fundamental gap. The other (S2) is located in the gap at the X-point. Resonance in the photoemission intensity of surface state S2 shows multiple peaks due to a surface umklapp process, similar to bulk transitions, because of large corrugation of the ionic surface. The penetration lengths deduced are about 4 Angstrom for both surface states. The dispersions of these states are very small. These two results indicate strong localization of the. surface state wave function to individual surface C atoms owing to the ionic character of this compound. That a surface state (S2) exists in a non-inverted Shockley gap is attributed to the compound structure. (C) 1999 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectangle-resolved photoemissionen_US
dc.subjectcarbidesen_US
dc.subjectinsulating filmsen_US
dc.subjectsurface statesen_US
dc.subjectsynchrotron radiationen_US
dc.titlePhotoemission study of surface state intensity resonance and dispersion of Be2C(100)en_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0039-6028(98)00910-8en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume423en_US
dc.citation.issue2-3en_US
dc.citation.spage232en_US
dc.citation.epage242en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000079431400016-
dc.citation.woscount2-
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