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dc.contributor.authorJiang, HCen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:46:55Z-
dc.date.available2014-12-08T15:46:55Z-
dc.date.issued1999-02-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.743787en_US
dc.identifier.urihttp://hdl.handle.net/11536/31538-
dc.description.abstractIn this paper, a 2-D velocity- and direction-selective visual motion sensor with a bipolar junction transistor (BJT)-based silicon retina and temporal zero-crossing detector is proposed and implemented. In the proposed sensor, a token-based delay-and-correlate computational algorithm is adopted to detect the selected speed and direction of moving object images. Moreover, binary pulsed signals are used as correlative signals to increase the velocity and direction selectivities, Each basic detection cell in the sensor has a compact architecture, which consists of one BJT-based silicon retina cell, one current-input edge extractor, two delay paths, and four correlators, Using the proposed architecture, an experimental 32 x 32 visual motion sensor chip with a cell size of 100 x 100 mu m(2) has been designed and fabricated by using 0.6-mu m CMOS technology. The correct operations of the fabricated sensor chip have been verified through measurements. The measured ranges of selectively detected velocity and direction in the fabricated sensor chip are 56 mm/s-5 m/s and 0-360 degrees, respectively. The complete sensor system consumes 20 mW at 5 V.en_US
dc.language.isoen_USen_US
dc.subjectbipolar junction transistor (BJT)-based siliconen_US
dc.subjectretinaen_US
dc.subjectCMOS motion-selective sensoren_US
dc.subjectcurrent-input edge extractoren_US
dc.subjectdirection-selective sensingen_US
dc.subjecttemporal zero-crossingsen_US
dc.subjectvelocity-selective sensingen_US
dc.titleA 2-D velocity- and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.743787en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume34en_US
dc.citation.issue2en_US
dc.citation.spage241en_US
dc.citation.epage247en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000078327700015-
dc.citation.woscount30-
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