Majority- and minority-carrier traps in Te-doped AlInP

Abstract

The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24+/-0.05 and 0.25+/-0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect. (C) 1999 American Institute of Physics. [S0003-6951(99)05202-X].