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dc.contributor.authorWu, YRen_US
dc.contributor.authorSung, WJen_US
dc.contributor.authorLee, WIen_US
dc.date.accessioned2014-12-08T15:47:04Z-
dc.date.available2014-12-08T15:47:04Z-
dc.date.issued1999-01-11en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/31581-
dc.description.abstractThe properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24+/-0.05 and 0.25+/-0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect. (C) 1999 American Institute of Physics. [S0003-6951(99)05202-X].en_US
dc.language.isoen_USen_US
dc.titleMajority- and minority-carrier traps in Te-doped AlInPen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume74en_US
dc.citation.issue2en_US
dc.citation.spage284en_US
dc.citation.epage286en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000077942400042-
dc.citation.woscount7-
Appears in Collections:Articles


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