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dc.contributor.authorLin, JJen_US
dc.contributor.authorXu, Wen_US
dc.contributor.authorZhong, YLen_US
dc.contributor.authorHuang, JHen_US
dc.contributor.authorHuang, YSen_US
dc.date.accessioned2019-04-03T06:39:16Z-
dc.date.available2019-04-03T06:39:16Z-
dc.date.issued1999-01-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.59.344en_US
dc.identifier.urihttp://hdl.handle.net/11536/31590-
dc.description.abstractWe have systematically measured the electron dephasing scattering times from a three-dimensional weak-localization study of low-diffusivity thick RuO2 and IrO2 films. We find that the inelastic electron scattering rate 1/tau(in) varies essentially Linearly with the temperature and there is essentially no dependence of 1/tau(in) on the electron elastic mean free path. This observation is understood in terms of the current theoretical concept for electron-electron scattering in strongly disordered bulk conductors. [S0163-1829(99)02601-6].en_US
dc.language.isoen_USen_US
dc.titleElectron-electron scattering times in low-diffusivity thick RuO2 and IrO2 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.59.344en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume59en_US
dc.citation.issue1en_US
dc.citation.spage344en_US
dc.citation.epage348en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000077943800072en_US
dc.citation.woscount12en_US
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