Electron-electron scattering times in low-diffusivity thick RuO2 and IrO2 films

doi:10.1103/PhysRevB.59.344

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, JJ	en_US
dc.contributor.author	Xu, W	en_US
dc.contributor.author	Zhong, YL	en_US
dc.contributor.author	Huang, JH	en_US
dc.contributor.author	Huang, YS	en_US
dc.date.accessioned	2019-04-03T06:39:16Z	-
dc.date.available	2019-04-03T06:39:16Z	-
dc.date.issued	1999-01-01	en_US
dc.identifier.issn	1098-0121	en_US
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.59.344	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31590	-
dc.description.abstract	We have systematically measured the electron dephasing scattering times from a three-dimensional weak-localization study of low-diffusivity thick RuO2 and IrO2 films. We find that the inelastic electron scattering rate 1/tau(in) varies essentially Linearly with the temperature and there is essentially no dependence of 1/tau(in) on the electron elastic mean free path. This observation is understood in terms of the current theoretical concept for electron-electron scattering in strongly disordered bulk conductors. [S0163-1829(99)02601-6].	en_US
dc.language.iso	en_US	en_US
dc.title	Electron-electron scattering times in low-diffusivity thick RuO2 and IrO2 films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1103/PhysRevB.59.344	en_US
dc.identifier.journal	PHYSICAL REVIEW B	en_US
dc.citation.volume	59	en_US
dc.citation.issue	1	en_US
dc.citation.spage	344	en_US
dc.citation.epage	348	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000077943800072	en_US
dc.citation.woscount	12	en_US
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