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dc.contributor.authorShen, JXen_US
dc.contributor.authorOka, Yen_US
dc.contributor.authorCheng, HHen_US
dc.contributor.authorTsai, FYen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:47:07Z-
dc.date.available2014-12-08T15:47:07Z-
dc.date.issued1999-01-01en_US
dc.identifier.issn0749-6036en_US
dc.identifier.urihttp://hdl.handle.net/11536/31615-
dc.description.abstractThe exciton dynamics in Ga1-xInxAs/GaAs self-organized quantum dots grown on GaAs (1 1 1)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells, (C) 1999 Academic Press.en_US
dc.language.isoen_USen_US
dc.subjecttransient photoluminescenceen_US
dc.subjectself organized quantum dotsen_US
dc.subjecthot excitation relaxationen_US
dc.titleExciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.citation.volume25en_US
dc.citation.issue1-2en_US
dc.citation.spage131en_US
dc.citation.epage136en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000078799200022-
Appears in Collections:Conferences Paper


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