Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots

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DC 欄位	值	語言
dc.contributor.author	Shen, JX	en_US
dc.contributor.author	Oka, Y	en_US
dc.contributor.author	Cheng, HH	en_US
dc.contributor.author	Tsai, FY	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:47:07Z	-
dc.date.available	2014-12-08T15:47:07Z	-
dc.date.issued	1999-01-01	en_US
dc.identifier.issn	0749-6036	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31615	-
dc.description.abstract	The exciton dynamics in Ga1-xInxAs/GaAs self-organized quantum dots grown on GaAs (1 1 1)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells, (C) 1999 Academic Press.	en_US
dc.language.iso	en_US	en_US
dc.subject	transient photoluminescence	en_US
dc.subject	self organized quantum dots	en_US
dc.subject	hot excitation relaxation	en_US
dc.title	Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	SUPERLATTICES AND MICROSTRUCTURES	en_US
dc.citation.volume	25	en_US
dc.citation.issue	1-2	en_US
dc.citation.spage	131	en_US
dc.citation.epage	136	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000078799200022	-
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