Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:47:12Z | - |
dc.date.available | 2014-12-08T15:47:12Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.issn | 0015-0193 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31658 | - |
dc.description.abstract | (Ba,Sr)TiO3 thin films are important capacitor materials for future gigabit era dynamic random access memory (DRAM) applications. This article reviews the technological aspects of BST films, including thin films deposition techniques, post annealing, physical, electrical and dielectric characteristics of the films, effects of bottom electrode materials, complex plane analysis of AC electrical, dielectric relaxation, and defect and reliability phenomena associated with the films. In addition, possible future developments are briefly summarized. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | BST | en_US |
dc.subject | thin films | en_US |
dc.subject | properties | en_US |
dc.subject | reliability | en_US |
dc.title | (Ba,Sr)TiO3 thin films: Preparation, properties and reliability | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | FERROELECTRICS | en_US |
dc.citation.volume | 232 | en_US |
dc.citation.issue | 1-4 | en_US |
dc.citation.spage | 881 | en_US |
dc.citation.epage | 893 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000165296900002 | - |
Appears in Collections: | Conferences Paper |