(Ba,Sr)TiO3 thin films: Preparation, properties and reliability

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:47:12Z	-
dc.date.available	2014-12-08T15:47:12Z	-
dc.date.issued	1999	en_US
dc.identifier.issn	0015-0193	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31658	-
dc.description.abstract	(Ba,Sr)TiO3 thin films are important capacitor materials for future gigabit era dynamic random access memory (DRAM) applications. This article reviews the technological aspects of BST films, including thin films deposition techniques, post annealing, physical, electrical and dielectric characteristics of the films, effects of bottom electrode materials, complex plane analysis of AC electrical, dielectric relaxation, and defect and reliability phenomena associated with the films. In addition, possible future developments are briefly summarized.	en_US
dc.language.iso	en_US	en_US
dc.subject	BST	en_US
dc.subject	thin films	en_US
dc.subject	properties	en_US
dc.subject	reliability	en_US
dc.title	(Ba,Sr)TiO3 thin films: Preparation, properties and reliability	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	FERROELECTRICS	en_US
dc.citation.volume	232	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	881	en_US
dc.citation.epage	893	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000165296900002	-
顯示於類別：	會議論文