標題: HRTEM and EFTEM studies of the evolution of Cu/Ta/SiO2/Si interfaces in ULSI devices
作者: Yin, KM
Chang, L
Chen, FR
Kai, JJ
Chuang, CCCG
Shen, CF
Lo, SC
Ding, P
Chin, B
Zhang, H
Chen, F
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1999
摘要: The Cu/Ta/SiO2/Si films have been annealed at temperatures from 500 degreesC to 600 degreesC in various vacuum conditions. Transmission electron microscopy has been used to characterize the microstructure of the films after annealing. It shows that different thicknesses of amorphous interlayer were formed between Cu and Ta under various vacuum conditions. Energy dispersive spectroscopy confirmed this interlayer to be tantalum oxide. It has also found that tantalum oxidation is caused by oxygen from the outside atmosphere diffusing along grain boundaries in copper films.
URI: http://hdl.handle.net/11536/31679
ISBN: 0-7503-0650-5
ISSN: 0951-3248
期刊: MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS
Issue: 164
起始頁: 545
結束頁: 548
Appears in Collections:Conferences Paper