標題: | Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect |
作者: | Chuang, JC Chen, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | chromium;copper;oxidation;X-ray photoelectron spectroscopy |
公開日期: | 14-十二月-1998 |
摘要: | This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved. |
URI: | http://hdl.handle.net/11536/31683 |
ISSN: | 0040-6090 |
期刊: | THIN SOLID FILMS |
Volume: | 335 |
Issue: | 1-2 |
起始頁: | 146 |
結束頁: | 152 |
顯示於類別: | 期刊論文 |