AuBe Ohmic contacts to p-type ZnTe

標題:	AuBe Ohmic contacts to p-type ZnTe
作者:	Lan, WH Lin, WJ Cheng, YC Tai, K Tasi, CM Wu, PH Cheng, KH Chou, ST Yang, CM Cheng, YC Huang, KF 電子物理學系光電工程學系 Department of Electrophysics Department of Photonics
公開日期:	10-Dec-1998
摘要:	Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.
URI:	http://hdl.handle.net/11536/31685
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	34
Issue:	25
起始頁:	2434
結束頁:	2435
Appears in Collections:	Articles

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