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dc.contributor.authorWang, MTen_US
dc.contributor.authorLin, YCen_US
dc.contributor.authorLee, JYen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2014-12-08T15:47:16Z-
dc.date.available2014-12-08T15:47:16Z-
dc.date.issued1998-12-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/31724-
dc.description.abstractThin-Film properties and barrier effectiveness against copper (Cu) diffusion of a thin amorphous WSix layer were investigated. The amorphous WSix layer was deposited by the chemical vapor deposition (CVD) method using the SiH4/WF6 chemistry with the activation energy determined to be 3.0 kcal/mol. The CVD-WSix film has a low film stress, low electrical resistivity, and excellent step coverage. The resistivity of the amorphous CVD-WSix layer increases with the deposition temperature, but the residual stress of the layer decreases with the deposition temperature. The WSix/Si structure is thermally stable up to at least 600 degrees C, while the copper-contacted Cu/WSix/Si structure with a 50 nm thick WSix barrier is stable only up to 550 degrees C. Moreover, the Cu/WSix/p(4)-n junction diodes can sustain a 30 min thermal annealing up to 500 degrees C without causing degradation in electrical characteristics. Barrier failure of the WSix layer in the Cu/WSix/Si structure at temperatures above 550 degrees C is attributed to Cu atoms diffusion via fast paths in the WSix layer. These fast paths were presumably developed from grain growth of the WSix layer and/or thermal-stress-induced weak points in the WSix layer.en_US
dc.language.isoen_USen_US
dc.titleThin-film properties and barrier effectiveness of chemically vapor deposited amorphous WSix filmen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume145en_US
dc.citation.issue12en_US
dc.citation.spage4206en_US
dc.citation.epage4211en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000077171500028-
dc.citation.woscount5-
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