標題: Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
作者: Lee, MC
Lin, HC
Pan, YC
Shu, CK
Ou, J
Chen, WH
Chen, WK
電子物理學系
Department of Electrophysics
公開日期: 2-Nov-1998
摘要: Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 degrees C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film. (C) 1998 American Institute of Physics. [S0003-6951(98)00744-X].
URI: http://dx.doi.org/10.1063/1.122520
http://hdl.handle.net/11536/31761
ISSN: 0003-6951
DOI: 10.1063/1.122520
期刊: APPLIED PHYSICS LETTERS
Volume: 73
Issue: 18
起始頁: 2606
結束頁: 2608
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