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dc.contributor.authorWang, CJen_US
dc.contributor.authorJou, CFen_US
dc.contributor.authorWu, JJen_US
dc.date.accessioned2014-12-08T15:47:24Z-
dc.date.available2014-12-08T15:47:24Z-
dc.date.issued1998-11-01en_US
dc.identifier.issn0018-926Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/8.736635en_US
dc.identifier.urihttp://hdl.handle.net/11536/31773-
dc.description.abstractA new two-terminal feeding active-integrated leaky-wave antenna design is demonstrated. The S-band microstrip two-terminal feeding leaky-wave antenna is integrated with an active high-electron mobility transistor (HEMT) oscillator to produce a two-beam radiation pattern, The antenna is fed asymmetriclly at both sides to excite the first higher order mode, This configuration, as compared to a single-terminal feeding leaky-wave antenna, has the advantage of the multidirection and the reduction of the reflected wave caused by the open end of the radiating element. Measured results show that the radiation directions of two beams are approximately at 34 degrees and 140 degrees, the effectively isotropic radiated power (EIRP) is close to 17.5 dBm, and the return Loss is almost less than -10 dB between 9 and 11.5 GHz.en_US
dc.language.isoen_USen_US
dc.subjectleaky-wave antennasen_US
dc.titleA new two-terminal feeding active leaky-wave antennaen_US
dc.typeLetteren_US
dc.identifier.doi10.1109/8.736635en_US
dc.identifier.journalIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATIONen_US
dc.citation.volume46en_US
dc.citation.issue11en_US
dc.citation.spage1749en_US
dc.citation.epage1750en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
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