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dc.contributor.authorHsu, SYen_US
dc.contributor.authorChervenak, JAen_US
dc.contributor.authorValles, JMen_US
dc.date.accessioned2014-12-08T15:47:28Z-
dc.date.available2014-12-08T15:47:28Z-
dc.date.issued1998-10-01en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://hdl.handle.net/11536/31825-
dc.description.abstractWe present measurements of the temperature dependence of the tunneling density of states near the Fermi energy, G(o)(T), and resistive transitions, R(T), of ultrathin PbBi films. Both R(T) and G(o)(T) broaden substantially near the superconductor to insulator transition (SIT). The broadening in R(TI is not affected by the proximity of a ground plane suggesting that long range Coulomb interactions are not important to the SIT. The results suggest that the transport properties of Alms near the SIT are influenced by fluctuations in both the phase and the amplitude of the order parameter. We discuss the data in terms of recent theories of the superconducting transition in low superfluid density systems. (C) 1998 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleTunneling measurements of fluctuation effects near the superconductor to insulator transitionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDSen_US
dc.citation.volume59en_US
dc.citation.issue10-12en_US
dc.citation.spage2065en_US
dc.citation.epage2067en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000077460500099-
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