完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Tseng, YK | en_US |
dc.contributor.author | Wu, CY | en_US |
dc.date.accessioned | 2014-12-08T15:47:31Z | - |
dc.date.available | 2014-12-08T15:47:31Z | - |
dc.date.issued | 1998-10-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/4.720408 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31838 | - |
dc.description.abstract | Two new bipolar complementary metal-oxide-semiconductor (BiCMOS) differential logic circuits called differential cross-coupled bootstrapped BiCMOS ((DCB)-B-2-BiCMOS) and differential cross-coupled BiCMOS (DC2-BiCMOS) logic are proposed and analyzed. In the proposed two new logic circuits, the novel cross-coupled BiCMOS; buffer circuit structure is used to achieve high-speed operation under low supply voltage, Moreover, a new bootstrapping technique that uses only one bootstrapping capacitor is adopted in the proposed (DCB)-B-2-BiCMOS logic to achieve fast near-full-swing operation at 1.5 V supply voltage for two differential outputs, HSPICE simulation results have shown that the new (DCB)-B-2-BiCMOS at 1.5 V and the new DC2-BiCMOS logic at 2 V have better speed performance than that of CMOS and other BiCMOS differential logic gates. It has been verified by the measurement results on an experimental chip of three-input (DCB)-B-2-BiCMOS XOR/XNOR gate chain fabricated by 0.8-mu m BiCMOS technology that the speed of (DCB)-B-2-BiCMOS at 1.5 V is about 1.8 times of that of the CMOS logic at 1.5 V, Due to the excellent circuit performance in high-speed, low-voltage operation, the proposed (DCB)-B-2-BiCMOS and DC2-BiCMOS logic circuits are feasible for low-voltage, high-speed applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A 1.5-V differential cross-coupled bootstrapped BiCMOS logic for low-voltage applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/4.720408 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1576 | en_US |
dc.citation.epage | 1579 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
顯示於類別: | 期刊論文 |