標題: Impact of Highly Compressive Interlayer-Dielectric-SiN(x) Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
作者: Chen, Yu-Ting
Chen, Kun-Ming
Liao, Wen-Shiang
Huang, Guo-Wei
Huang, Fon-Shan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Dec-2010
摘要: The 1/f noise and reliability of SiGe-channel pMOSFETs with a highly compressive contact-etching stop-layer (CESL) interlayer-dielectric-SiN(x) stressing layer have been studied in this letter. The SiGe-channel devices with a highly compressive CESL layer have higher drain current and lower 1/f noise than the conventional SiGe-channel and bulk-Si devices. However, the device reliability is degraded while integrating with the highly compressive CESL layer. By examining the effective oxide-trap densities under hot-carrier instability stress, we find that the incorporated hydrogen in gate oxide during CESL layer deposition may play an important role on the 1/f noise and device reliability.
URI: http://dx.doi.org/10.1109/LED.2010.2073438
http://hdl.handle.net/11536/31877
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2073438
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 12
起始頁: 1368
結束頁: 1370
Appears in Collections:Articles