標題: | Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001) |
作者: | Chang, W. H. Chang, P. Lai, T. Y. Lee, Y. J. Kwo, J. Hsu, C-H Hong, M. 光電工程學系 Department of Photonics |
公開日期: | 1-十二月-2010 |
摘要: | High-quality Gd(2)O(3) epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd(2)O(3) ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship |
URI: | http://dx.doi.org/10.1021/cg100851b http://hdl.handle.net/11536/31908 |
ISSN: | 1528-7483 |
DOI: | 10.1021/cg100851b |
期刊: | CRYSTAL GROWTH & DESIGN |
Volume: | 10 |
Issue: | 12 |
起始頁: | 5117 |
結束頁: | 5122 |
顯示於類別: | 期刊論文 |