完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chao, Yu-Chiang | en_US |
dc.contributor.author | Ku, Ming-Che | en_US |
dc.contributor.author | Tsai, Wu-Wei | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.contributor.author | Tsai, Hung-Kuo | en_US |
dc.contributor.author | Horng, Sheng-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:47:44Z | - |
dc.date.available | 2014-12-08T15:47:44Z | - |
dc.date.issued | 2010-11-29 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3513334 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31914 | - |
dc.description.abstract | We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Polymer space-charge-limited transistor as a solid-state vacuum tube triode | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3513334 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 97 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.spage | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Photonics | en_US |
顯示於類別: | 期刊論文 |