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dc.contributor.authorLAN, WHen_US
dc.contributor.authorLIN, WJen_US
dc.contributor.authorTU, SLen_US
dc.contributor.authorYANG, SJen_US
dc.contributor.authorHUANG, KFen_US
dc.date.accessioned2014-12-08T15:04:42Z-
dc.date.available2014-12-08T15:04:42Z-
dc.date.issued1993-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.32.150en_US
dc.identifier.urihttp://hdl.handle.net/11536/3192-
dc.description.abstractThe deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.en_US
dc.language.isoen_USen_US
dc.subjectPHOTOCHEMICAL VAPOR DEPOSITIONen_US
dc.subjectLANGMUIR-HINSHELWOOD THEORYen_US
dc.titleREACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDEen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.32.150en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume32en_US
dc.citation.issue1Aen_US
dc.citation.spage150en_US
dc.citation.epage154en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1993KK94300026-
dc.citation.woscount1-
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