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dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorCheng, Ching-Yuanen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.date.accessioned2014-12-08T15:47:47Z-
dc.date.available2014-12-08T15:47:47Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3511284en_US
dc.identifier.urihttp://hdl.handle.net/11536/31955-
dc.description.abstractOptical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 degrees C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra. (c) 2010 American Institute of Physics. [doi:10.1063/1.3511284]en_US
dc.language.isoen_USen_US
dc.titleAnnealing effect on the optical response and interdiffusion of n-ZnO/p-Si, (111) heterojunction grown by atomic layer depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3511284en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000283934100027-
dc.citation.woscount6-
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