完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, Chi-Wenen_US
dc.contributor.authorChen, Huang-Ming Philipen_US
dc.date.accessioned2014-12-08T15:47:54Z-
dc.date.available2014-12-08T15:47:54Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn1071-0922en_US
dc.identifier.urihttp://dx.doi.org/10.1889/JSID18.11.976en_US
dc.identifier.urihttp://hdl.handle.net/11536/31975-
dc.description.abstractThe horizontal chevron defect found in a half-V-mode ferroelectric-liquid-crystal (HV-FLC) device can be suppressed by lowering the FLC's total free energy. The energy levels between spontaneous polarization (P(S)) up and down domains were degenerated by asymmetrical-alignment treatments. The difference in the polar surface coefficient (gamma(2)) was the key to suppressing the alignment defect. Alignment layers with opposite surface polarities and different anchoring energies were applied to control the sign and value of gamma(2). The asymmetric cells of PI(rub) - PI(plasma) (rubbed polyimide and plasma-treated polyimide surfaces), PVA(rub) - PI(plasma) (rubbed polyvinyl alcohol and plasma-treated polyimide surfaces), and PVA(rub) - PI(rub) (both rubbed PI and PVA) alignment conditions presented defect-free alignment textures under a slow-cooling process. Among these different alignment treatments, the PVA(rub) - PI(rub) treated cell demonstrated the best alignment result, benefited by the largest difference in polar surface coefficient.en_US
dc.language.isoen_USen_US
dc.subjectHalf-V-mode FLCen_US
dc.subjectferroelectric liquid crystalen_US
dc.subjectalignment defecten_US
dc.subjecthorizontal chevron defecten_US
dc.titleDefect-free half-V-mode ferroelectric liquid-crystal deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1889/JSID18.11.976en_US
dc.identifier.journalJOURNAL OF THE SOCIETY FOR INFORMATION DISPLAYen_US
dc.citation.volume18en_US
dc.citation.issue11en_US
dc.citation.spage976en_US
dc.citation.epage980en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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