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dc.contributor.authorYen, Cheng-Yoen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorLiao, Ying-Yenen_US
dc.contributor.authorJang, Jason Shian-Chingen_US
dc.contributor.authorLin, Tjung-Hanen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:48:04Z-
dc.date.available2014-12-08T15:48:04Z-
dc.date.issued2010-10-22en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2010.08.109en_US
dc.identifier.urihttp://hdl.handle.net/11536/32055-
dc.description.abstractThe structural and nanomechanical characteristics of the hexagonal HoMnO(3) (HMO) thin films are investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and nanoindentation techniques in this study. The HMO thin films were deposited on YSZ(1 1 1) substrates by pulsed laser deposition (PLD). The XRD results reveal only pure (0 0 0 1)-oriented hexagonal HMO reflections without any discernible traces of impurity or secondary phases. Nanoindentation results exhibit discontinuities in the load-displacement curve (so-called multiple "pop-ins" event) during loading, indicating possible involvement of dislocation activities. No discontinuities were observed on unloading segment of the load-displacement curve. Continuous stiffness measurements (CSM) technique was carried out in the nanoindentation tests to determine the hardness and Young's modulus of the hexagonal HMO thin films. The obtained hardness and Young's modulus of the hexagonal HMO thin films are 14.2 +/- 0.7 GPa and 219.2 +/- 10.6 GPa, respectively with the room-temperature fracture toughness being in the order of 0.4 +/- 0.2 MPa m(1/2). (c) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleMechanical properties of the hexagonal HoMnO(3) thin films by nanoindentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2010.08.109en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume508en_US
dc.citation.issue2en_US
dc.citation.spage523en_US
dc.citation.epage527en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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