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dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorHuang, Hung-Hsunen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:48:06Z-
dc.date.available2014-12-08T15:48:06Z-
dc.date.issued2010-10-11en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.18.021743en_US
dc.identifier.urihttp://hdl.handle.net/11536/32077-
dc.description.abstractThe optical polarization properties of a-plane Al(x)Ga(1-x)N films have been investigated by polarization-dependent photoluminescence (PL). The degree of polarization decreased with increasing the Al composition, and the main optical polarization direction switched from epsilon perpendicular to c to epsilon // c at about x = 0.07 due to the valence band switching, representing that the optical transition energy of epsilon // c is surpassing that of epsilon perpendicular to c. However, with the Al composition larger than x = 0.1, the higher energy optical transitions of epsilon // c exhibited the stronger PL intensity, opposite to the normal situations that higher energy states commonly have weaker PL intensity than the lower energy states. We utilized the 6 x 6 k.p model and the lambertian-like radiation pattern assumption to explain this abnormal optical polarization switching behavior in the a-plane Al(x)Ga(1-x)N layers and obtained good agreement with the experimental results. (C) 2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleAbnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)Nen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.18.021743en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume18en_US
dc.citation.issue21en_US
dc.citation.spage21743en_US
dc.citation.epage21749en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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