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dc.contributor.authorChuang, Shiow-Hueyen_US
dc.contributor.authorGao, Reui-Hongen_US
dc.contributor.authorGao, Kuo-Hsingen_US
dc.contributor.authorChiang, Michael Y.en_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:48:07Z-
dc.date.available2014-12-08T15:48:07Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0009-4536en_US
dc.identifier.urihttp://hdl.handle.net/11536/32091-
dc.description.abstractThis research successfully produces high quality cobalt titanate (CoTiO(3)) thin films, a high-k material for gate dielectrics, on SiO(2)/Si(100) substrates via a spin-coating method with a sol-like precursor solution. This study prepares the precursor solution by reactions of cobalt acetate and titanium isopropoxide in 2-methoxyethanol. The current work obtains CoTiO(3) thin films after spin coating followed by post-treatment with air under 550 similar to 650 degrees C. A scanning electron microscope, determines film thickness and morphology and X-ray diffraction identifies material structures. This study uses X-ray photoelectron spectroscopy to analyze both elemental compositions and chemical bonding characters of the thin films. This work also investigates reaction pathways.en_US
dc.language.isoen_USen_US
dc.subjectCobalt titanateen_US
dc.subjectCoTiO(3)en_US
dc.subjectSol-like precursoren_US
dc.subjectSpin coatingen_US
dc.subjectThin filmsen_US
dc.titleFormation and Structural Characterization of Cobalt Titanate Thin Filmsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE CHINESE CHEMICAL SOCIETYen_US
dc.citation.volume57en_US
dc.citation.issue5Aen_US
dc.citation.spage1022en_US
dc.citation.epage1026en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000285525900009-
dc.citation.woscount2-
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