標題: Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient
作者: Hu, Chih-Wei
Chang, Ting-Chang
Tu, Chun-Hao
Chiang, Cheng-Neng
Lin, Chao-Cheng
Chen, Min-Chen
Chang, Chun-Yen
Sze, Simon M.
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2010
摘要: In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N(2) and O(2) ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi(2) and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N(2) ambient has smaller memory window and better retention characteristics than in O(2) ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.04.098
http://hdl.handle.net/11536/32118
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.04.098
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7304
結束頁: 7307
顯示於類別:期刊論文