標題: | Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient |
作者: | Hu, Chih-Wei Chang, Ting-Chang Tu, Chun-Hao Chiang, Cheng-Neng Lin, Chao-Cheng Chen, Min-Chen Chang, Chun-Yen Sze, Simon M. Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十月-2010 |
摘要: | In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N(2) and O(2) ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi(2) and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N(2) ambient has smaller memory window and better retention characteristics than in O(2) ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.04.098 http://hdl.handle.net/11536/32118 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.04.098 |
期刊: | THIN SOLID FILMS |
Volume: | 518 |
Issue: | 24 |
起始頁: | 7304 |
結束頁: | 7307 |
顯示於類別: | 期刊論文 |