標題: | Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition |
作者: | Lo, Shun-Tsung Chen, Kuang Yao Lin, T. L. Lin, Li-Hung Luo, Dong-Sheng Ochiai, Y. Aoki, N. Wang, Yi-Ting Peng, Zai Fong Lin, Yiping Chen, J. C. Lin, Sheng-Di Huang, C. F. Liang, C. -T. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Semiconductor;Epitaxy;Electron-electron interactions;Quantum Hall effect |
公開日期: | 1-Oct-2010 |
摘要: | We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.ssc.2010.07.040 http://hdl.handle.net/11536/32159 |
ISSN: | 0038-1098 |
DOI: | 10.1016/j.ssc.2010.07.040 |
期刊: | SOLID STATE COMMUNICATIONS |
Volume: | 150 |
Issue: | 39-40 |
起始頁: | 1902 |
結束頁: | 1905 |
Appears in Collections: | Articles |
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