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dc.contributor.authorChen, Kuan-Chiaen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorLiao, Chien-Nengen_US
dc.contributor.authorChen, Lih-Juannen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:48:17Z-
dc.date.available2014-12-08T15:48:17Z-
dc.date.issued2010-09-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3483949en_US
dc.identifier.urihttp://hdl.handle.net/11536/32190-
dc.description.abstractMigration of {112} incoherent twin boundary (ITB) in nanotwinned Cu under electric current stressing has been observed using in situ high-resolution transmission electron microscopy. The current-driven ITB migration is found to be four orders of magnitude faster than that driven thermally. We propose that electric current plays a role of shuffling Cu atoms at ITB/coherent twin boundary junctions, which enhances nucleation of {112} steps and facilitates twin boundary migration in Cu. By understanding how twin boundaries respond to electric current force we shall be able to trace the property change in nanotwinned Cu under electric current stressing, which would be an essential assessment of interconnect reliability. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483949]en_US
dc.language.isoen_USen_US
dc.titleStability of nanoscale twins in copper under electric current stressingen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3483949en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume108en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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