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dc.contributor.authorLi, J. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorHuang, H. M.en_US
dc.contributor.authorChan, W. W.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:48:17Z-
dc.date.available2014-12-08T15:48:17Z-
dc.date.issued2010-09-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3483239en_US
dc.identifier.urihttp://hdl.handle.net/11536/32191-
dc.description.abstractNonpolar (a-plane) GaN nanorod arrays with embedded In(x)Ga(1-x)N/GaN (x=0.09, 0.14, 0.24, and 0.30) multiple quantum wells (MQWs) grown on r-plane sapphire have been fabricated successfully by self-assembled Ni nanomasks and subsequent inductively coupled plasma reactive-ion etching. After nanorod fabrications, the polarization ratio of the emission from MQWs with lower indium composition (x=0.09 and 0.14) slightly decreases but apparently increases by at most 79% for the samples with higher indium composition (x=0.24 and 0.30). Competition between the effect of multiple scattering, strain relaxation and reduction in localized centers, expected in a-plane MQW samples, are attributed to the variations in the polarization ratios after the nanorod formation. (c) 2010 American Institute of Physics. [doi:10.1063/1.3483239]en_US
dc.language.isoen_USen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectnanofabricationen_US
dc.subjectnanorodsen_US
dc.subjectself-assemblyen_US
dc.subjectsemiconductor growthen_US
dc.subjectsemiconductor quantum wellsen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleCharacteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3483239en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume108en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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