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dc.contributor.authorChen, Ting-Gangen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChou, Rone-Hwaen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2019-04-03T06:38:37Z-
dc.date.available2019-04-03T06:38:37Z-
dc.date.issued2010-09-13en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.18.00A467en_US
dc.identifier.urihttp://hdl.handle.net/11536/32197-
dc.description.abstractVertically-aligned silicon nanowires (SiNWs) that demonstrate reductions of phonon thermal conductivities are ideal components for thermoelectric devices. In this paper, we present large-area silicon nanowire arrays in various lengths using a silver-induced, electroless-etching method that is applicable to both n- and p-type substrates. The measured thermal conductivities of nanowire composites are significantly reduced by up to 43%, compared to that of bulk silicon. Detailed calculations based on the series thermal resistance and phonon radiative transfer models confirm the reduction of thermal conductivity not only due to the increased air fraction, but also the nanowire size effect, suggesting the soundness of employing bulk silicon nanowire composites as efficient thermoelectric materials. (C) 2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titlePhonon thermal conductivity suppression of bulk silicon nanowire composites for efficient thermoelectric conversionen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.18.00A467en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume18en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000281779600098en_US
dc.citation.woscount9en_US
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