Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET

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DC Field	Value	Language
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.contributor.author	Lu, Chi-Pei	en_US
dc.contributor.author	Liu, Hsiao-Han	en_US
dc.date.accessioned	2014-12-08T15:48:17Z	-
dc.date.available	2014-12-08T15:48:17Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2071-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32198	-
dc.description.abstract	Modified Schottky Barrier MOSFET with low resistance metal source/drain and good short channel effect immunity is one of the promising nano-scale device structures. In this work, a modified external load resistance method was proposed to extract the bias dependent source injection resistance of the MSB multi-gate MOSFET. The injection resistance is exponentially proportional to (V(GS)-V(th)-0.5V(DS)) and would be close to the source/drain resistance of conventional MOSFET at high gate bias.	en_US
dc.language.iso	en_US	en_US
dc.title	Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET	en_US
dc.type	Article	en_US
dc.identifier.journal	2008 IEEE SILICON NANOELECTRONICS WORKSHOP	en_US
dc.citation.spage	71	en_US
dc.citation.epage	72	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000279102800037	-
Appears in Collections:	Conferences Paper