標題: Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
作者: Chang, C. -T.
Hsu, T. -H.
Chang, E. Y.
Chen, Y. -C.
Trinh, H. -D.
Chen, K. J.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2-九月-2010
摘要: Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.
URI: http://dx.doi.org/10.1049/el.2010.1939
http://hdl.handle.net/11536/32202
ISSN: 0013-5194
DOI: 10.1049/el.2010.1939
期刊: ELECTRONICS LETTERS
Volume: 46
Issue: 18
起始頁: 1280
結束頁: U63
顯示於類別:期刊論文


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