Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsieh, E. R.en_US
dc.contributor.authorChang, Derrick W.en_US
dc.contributor.authorChung, S. S.en_US
dc.contributor.authorLin, Y. H.en_US
dc.contributor.authorTsai, C. H.en_US
dc.contributor.authorTsai, C. T.en_US
dc.contributor.authorMa, G. H.en_US
dc.date.accessioned2014-12-08T15:48:25Z-
dc.date.available2014-12-08T15:48:25Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1614-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/32253-
dc.identifier.urihttp://dx.doi.org/10.1109/VTSA.2008.4530826en_US
dc.description.abstractIn this paper, the device performance in terms of its transport charactertitics and reliability of the MOS devices on the SOI and strained-SOI have been examined. For the first time, both the transport and reliability characteristics have been established from. experimental SOI and SSOI nMOSFETs. It was characterized by two parameters, the ballistic efficiency and the injection velocity. Experimental verifications on rMOSFETs with both technologies with tensile-stress enhancement have been made. For SSOI devices, it shows the expected drain current enhancements. For the reliability evaluations, SOI shows a smaller lattice such that it exhibits a much worse hot carrier (HC) reliability, while SSOI device shows a poorer interface quality verified from the FN-stress experiment. In general, although SSOI exhibits a worse interface quality while its reliability is much better than that of SOI's. Moreover, SSOI device shows a very high injection velocity as a result of the high strain of the device which makes it successful for drain current enhancement.en_US
dc.language.isoen_USen_US
dc.titleThe ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/VTSA.2008.4530826en_US
dc.identifier.journal2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAMen_US
dc.citation.spage120en_US
dc.citation.epage121en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000256564900055-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000256564900055.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.