Fabrication and Configuration Development of Silicon Nitride Sub-Wavelength Structures for Solar Cell Application

Abstract

To replace the double layer antireflection coating and improve the efficiency of solar cell, a self assembled nickel nano particle mask followed by inductively coupled plasma (ICP) ion etching method is proposed to form the sub-wavelength structures (SWS) on silicon nitride (Si(3)N(4)) antireflection coating layers instead of semiconductor layer. The size and density of nickel nano particles can be controlled by the initial thickness of nickel film that is annealed to form the nano-particles on the Si(3)N(4) film deposited on the silicon substrate. ICP etching time is responsible for controlling the height of the fabricated Si(3)N(4) SWS on silicon substrate, which is seen from our experiment. It is found that the lowest average reflectivity of 3.12% for wavelength ranging from 350 to 1000 nm is achieved when the diameter and height of the SWS are 120-180 nm and 150-160 nm, respectively. A low reflectance below 1% is observed over the wavelength from 590 to 680 nm for the fabricated Si(3)N(4) SWS on silicon subs. The efficiency of Si(3)N(4) SWS could be improved by 1.31%, compared with the single layer anti-reflection (SLAR) coatings of Si(3)N(4), using PC1D program. The results of this study may benefit the fabrication of solar cells.