Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Chung-Hou | en_US |
dc.contributor.author | Latha, K. V. P. | en_US |
dc.date.accessioned | 2019-04-03T06:38:36Z | - |
dc.date.available | 2019-04-03T06:38:36Z | - |
dc.date.issued | 2010-08-30 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.82.085120 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32278 | - |
dc.description.abstract | Based on the recent paper [Phys. Rev. Lett. 102, 216803 (2009)], we study the nonequilibrium occupation number n(d) and charge susceptibility chi of a resonance level close to dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a delocalized phase for weak dissipation and a localized phase for strong dissipation. The resonance level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic bosonic bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. Within the nonequilibrium renormalization-group approach, we calculate nonequilibrium magnetization M and spin susceptibility chi in the effective Kondo model, corresponding to 2n(d)-1 and chi of a resonance level, respectively. We demonstrate the smearing of the KT transition in the nonequilibrium magnetization M as a function of the effective anisotropic Kondo couplings, in contrast to a perfect jump in M at the transition in equilibrium. In the limit of large bias voltages, we find M and chi at the KT transition and in the localized phase show deviations from the equilibrium Curie-law behavior. As the system gets deeper in the localized phase, both n(d)-1/2 and chi decrease more rapidly to zero with increasing bias voltages. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nonequilibrium occupation number and charge susceptibility of a resonance level close to a dissipative quantum phase transition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.82.085120 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 82 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000281367200003 | en_US |
dc.citation.woscount | 3 | en_US |
Appears in Collections: | Articles |
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