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dc.contributor.authorBorisevich, A. Y.en_US
dc.contributor.authorChang, H. J.en_US
dc.contributor.authorHuijben, M.en_US
dc.contributor.authorOxley, M. P.en_US
dc.contributor.authorOkamoto, S.en_US
dc.contributor.authorNiranjan, M. K.en_US
dc.contributor.authorBurton, J. D.en_US
dc.contributor.authorTsymbal, E. Y.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorYu, P.en_US
dc.contributor.authorRamesh, R.en_US
dc.contributor.authorKalinin, S. V.en_US
dc.contributor.authorPennycook, S. J.en_US
dc.date.accessioned2019-04-03T06:38:27Z-
dc.date.available2019-04-03T06:38:27Z-
dc.date.issued2010-08-19en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.105.087204en_US
dc.identifier.urihttp://hdl.handle.net/11536/32290-
dc.description.abstractEpitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO(3)-La(0.7)Sr(0.3)MnO(3) interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO(3) and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.en_US
dc.language.isoen_USen_US
dc.titleSuppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.105.087204en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume105en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000281071800015en_US
dc.citation.woscount211en_US
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