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dc.contributor.authorLo, Tien-Yuen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.contributor.authorLo, Chi-Hsiangen_US
dc.date.accessioned2014-12-08T15:48:36Z-
dc.date.available2014-12-08T15:48:36Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0916-8508en_US
dc.identifier.urihttp://dx.doi.org/10.1587/transfun.E93.A.1556en_US
dc.identifier.urihttp://hdl.handle.net/11536/32319-
dc.description.abstractA CMOS transconductor for multi-mode application is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier, which operates in the weak inversion region, provides a wide transconductance tuning range without degrading the linearity. The transconductor was designed and fabricated in the TSMC 0.18-mu m CMOS process. The results show the transconductance tuning ratio of 23 and the IM3 performance of -68.5 dB.en_US
dc.language.isoen_USen_US
dc.subjecttransconductoren_US
dc.subjectIM3en_US
dc.subjectCMFFen_US
dc.subjecttuningen_US
dc.titleA-68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Rangeen_US
dc.typeArticleen_US
dc.identifier.doi10.1587/transfun.E93.A.1556en_US
dc.identifier.journalIEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCESen_US
dc.citation.volumeE93Aen_US
dc.citation.issue8en_US
dc.citation.spage1556en_US
dc.citation.epage1559en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000281343100020-
dc.citation.woscount1-
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