标题: | Plasma-enhanced flexible metal-insulator-metal capacitor using high-k ZrO(2) film as gate dielectric with improved reliability |
作者: | Chu, Min-Ching Meena, Jagan Singh Cheng, Chih-Chia You, Hsin-Chiang Chang, Feng-Chih Ko, Fu-Hsiang 材料科学与工程学系奈米科技硕博班 应用化学系 Graduate Program of Nanotechnology , Department of Materials Science and Engineering Department of Applied Chemistry |
公开日期: | 1-八月-2010 |
摘要: | We demonstrate a new flexible metal-insulator-metal capacitor using 9.5-nm-thick ZrO(2) film on a plastic polyimide substrate based on a simple and low-cost sal-gel precursor spin-coating process. The surface morphology of the ZrO(2) film was investigated using scan electron microscope and atomic force microscope. The as-deposited ZrO(2) film under suitable treatment of oxygen (O(2)) plasma and then subsequent annealing at 250 degrees C exhibits superior low leakage current density of 9.0 x 10(-9) A/cm(2) at applied voltage of 5 V and maximum capacitance density of 13.3 fF/mu m(2) at 1 MHz. The as-deposited sol-gel film was completely oxidized when we employed O(2) plasma at relatively low temperature and power (30 W), hence enhancing the electrical performance of the capacitor. The shift (Zr 3d from 184.1 eV to 184.64 eV) in X-ray photoelectron spectroscopy of the binding energy of the electrons towards higher binding energy; clearly indicates that the O(2) plasma reaction was most effective process for the complete oxidation of the sol-gel precursor at relatively low processing temperature. (C) 2010 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.microrel.2010.05.004 http://hdl.handle.net/11536/32344 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2010.05.004 |
期刊: | MICROELECTRONICS RELIABILITY |
Volume: | 50 |
Issue: | 8 |
起始页: | 1098 |
结束页: | 1102 |
显示于类别: | Articles |