標題: High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y(2)O(3) Stacked Dielectric
作者: Tsui, Bing-Yue
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-2010
摘要: The HfTiO/Y(2)O(3) stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y(2)O(3) is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y(2)O(3) layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-alpha) of Y(2)O(3) cancels out the positive VCC-alpha of HfTiO to achieve low VCC-alpha. The MIM capacitor structure with HfTiO/Y(2)O(3) dielectric shows a capacitance density that is higher than 11 fF/mu m(2) and VCC-alpha that is lower than 1222 ppm/V(2). The leakage currents at -1 and -2 V are 6.4 and 14 nA/cm(2), respectively. These results suggest that the HfTiO/Y(2)O(3) stacked dielectric is a promising candidate for MIM capacitors.
URI: http://dx.doi.org/10.1109/LED.2010.2051316
http://hdl.handle.net/11536/32370
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2051316
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 8
起始頁: 875
結束頁: 877
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