標題: | THE EFFECT OF GRAIN-BOUNDARIES ON THE ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTOR |
作者: | BAI, SN TSENG, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | ZNO VARISTOR;GRAIN BOUNDARY;AC RESPONSE |
公開日期: | 1-Nov-1992 |
摘要: | The ac response of ZnO-based varistors was measured as a function of temperature and applied electric field. Conductivity-frequency measurements indicated that the grain boundaries of the ZnO varistors were amorphous. The device resistance was found to decrease as the temperature/applied field increased. This was attributed to deterioration of the insulating property of the grain boundaries due to generation of conduction carriers in the ZnO grains. As a large amount of these charge carriers passed through the grain boundaries, the ZnO varistors remarkably revealed a non-Debye characteristic that can be modeled by a capacitance to simulate the behavior of the grain boundaries |
URI: | http://dx.doi.org/10.1007/BF02665886 http://hdl.handle.net/11536/3245 |
ISSN: | 0361-5235 |
DOI: | 10.1007/BF02665886 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 21 |
Issue: | 11 |
起始頁: | 1073 |
結束頁: | 1079 |
Appears in Collections: | Articles |